The influence of oxygen on the minority carrier lifetime of silicon is reported. Bulk annealed, oxygen-rich crystals subsequently sliced into wafers show lifetime degradation with annealing time. Silicon oxide precipitates and punched out dislocation loops induced during annealing are identified as electrically active defects responsible for the observed lifetime degradation. Increase in device yields (diodes) and improved lifetime in epitaxial films obtained with oxygen-rich wafers as substrates are a result of “intrinsic gettering” of oxygen-rich wafers. It is shown that “external gettering” cannot improve minority carrier lifetime in silicon wafers if during processing “intrinsic gettering” is activated. It is also shown that “external gettering” such as impact sound stressing (ISS) is very effective in improving lifetime for wafers not containing “intrinsic gettering” sources.

Abstract

Der Einfluß von Sauerstoff auf die Minoritätslebensdauer von Silizium wird untersucht. Volumengetemperte, sauerstoffreiche Kristalle, die anschließend in Wafer geteilt wurden, zeigen Lebensdauerverringerung mit der Temperungsdauer. Siliziumdioxidpräzipitate und austretende Versetzungsschleifen, die während der Temperung induziert werden, werden als elektrisch aktive Defekte identifiziert, die für die beobachtete Lebensdauerverringerung verantwortlich sind. Der Anstieg in der Bauelementeausbeute (Dioden) und die verbesserte Lebensdauer in Epitaxieschichten, die mit sauerstoffreichem Wafer als Substrat erhalten werden, sind das Ergebnis eines “inneren Getterungsmechanismus” der sauerstoffreichen Wafer. Es wird gezeigt, daß eine “äußere Getterung” die Minoritätslebensdauer in Siliziumwafer nicht verbessern kann, wenn während der Herstellung “innere Getterung” aktiviert worden ist. Es wird auch gezeigt, daß eine “äußere Getterung”, wie Schallstoßbeanspruchung (ISS) sehr effektiv für die Verbesserung der Lebensdauer von Wafern ist, die keine “inneren” Getterungsquellen enthalten.

References

1 H. Föll and B. O. Kolbesen, Appl. Phys. 8, 319 (1975).
10.1007/BF00898366
Web of Science® Google Scholar
2 P. M. Petroff and A. J. R. Dekock, J. Crystal Growth 30, 117 (1975).
10.1016/0022-0248(75)90210-9
CAS Web of Science® Google Scholar
3 A. J. R. Dekock, Appl. Phys. Letters 16, 3, 100 (1970).
10.1063/1.1653019
Web of Science® Google Scholar
4 K. V. Ravi and C. J. Varker, Appl. Phys. Letters 25, 1, (1974).
10.1063/1.1655283
Web of Science® Google Scholar
5 G. H. Schwuttke, J. Electrochem. Soc. 108, 63 (1961).
10.1149/1.2428034
Web of Science® Google Scholar
6 J. R. Patel and A. Authier, J. appl. Phys. 46, 118 (1975).
10.1063/1.321331
CAS Web of Science® Google Scholar
7 T. Y. Tan and W. K. Tice, Phil. Mag. 30, 615 (1976).
10.1080/14786437608223798
Google Scholar
8 M. Olivier, D. Lafeuille, M. Dupuy, G. Rolland, and B. Guinet, Extended Abstract No. 145, Electrochem. Soc. Meeting, Toronto, Canada (May, 1975).
Google Scholar
9 D. M. Maher, A. Staudinger, and J. R. Patel, J. appl. Phys. 47, 3813 (1976).
10.1063/1.323241
CAS Web of Science® Google Scholar
10 P. F. Friedland, V. A. Jackson, C. W. Low, and J. R. Patel, Appl. Phys. Letters 30, 1, 31 (1977).
10.1063/1.89215
Web of Science® Google Scholar
11 V. V. Batavin, Soviet Phys.–Semicond. 4, 641 (1970).
Web of Science® Google Scholar
12 G. A. Rozgonyi and R. A. Kushner, J. Electrochem. Soc. 123, 570 (1976).
10.1149/1.2132879
CAS Web of Science® Google Scholar
13 L. C. Kimerling, H. J. Leamy, and J. R. Patel, Appl. Phys. Letters 30, 217 (1977).
10.1063/1.89355
CAS Web of Science® Google Scholar
14 K. V. Ravi and C. J. Varker, J. appl. Phys. 45, 263 (1974).
10.1063/1.1662971
CAS Web of Science® Google Scholar
15 D. I. Pomerantz, J. Electrochem. Soc. 119, 255 (1972).
10.1149/1.2404171
CAS Web of Science® Google Scholar
16 G. H. Schwuttke, ARPA Contract No. DAHC 15-72-C-0274, Technical Rep. No. 2 (July, 1973).
Google Scholar
17 J. T. Yue and H. J. Ruiz, Semiconductor Silicon 1977, Electrochem. Soc. 1977 (P. 596).
Google Scholar
18 E. L. Nolle, V. M. Malovetskaya, and V. S. Vavilov, Soviet Phys.–Solid Stat 4, 1374 (1962).
CAS Google Scholar
19 T. Y. Tan, E. E. Gardner, and W. K. Tice, Appl. Phys. Letters 30, 175 (1977).
10.1063/1.89340
CAS Web of Science® Google Scholar
20 J. K. Graff and H. Pieper, J. electronic Mater. 4, 2, 281 (1975).
10.1007/BF02655406
Web of Science® Google Scholar
21 D. Helmreich and E. Sirtl, Semiconductor Silicon 1977, Electrochem. Soc. 1977 (P. 626).
Google Scholar
22 W. Fahrner and C. P. Schneider, J. Electrochem. Soc. 123, 100 (1975).
10.1149/1.2132738
Web of Science® Google Scholar
23 W. Kaiser and P. H. Keck, J. appl. Phys. 28, 882 (1957).
10.1063/1.1722880
CAS Web of Science® Google Scholar
24 T. Abe, Y. Abe, and J. Chikawa, Semiconductor Silicon 1977, Electrochem. Soc. 1977 (P. 95).
Google Scholar
25 T. Abe, K. Kikuchi, and S. Shirai, Semiconductor Silicon 1977, Electrochem. Soc. 1977 (P. 95).
Google Scholar
26 T. F. Ciszek, Semiconductor Silicon 1973, Electrochem. Soc. 1973 (P. 150).
Google Scholar
27 P. B. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley, and M. J. Whelan, Electron Microscopy of Thin Crystals, Plenum Publishing Co., New York 1965 (p. 265).
Web of Science® Google Scholar
28 R. Gevers, A. Art, and S. Amelinckx, Phys. stat. sol. 3, 1563 (1963).
10.1002/pssb.19630030905
CAS Web of Science® Google Scholar
29 D. Bialas and J. Hesse, J. Mater. Sci. 4, 779 (1969).
10.1007/BF00551072
CAS Web of Science® Google Scholar
30 G. H. Schwuttke, K. Yang, and H. Kappert, Phys. stat. sol. (a) 42, 553 (1977).
10.1002/pssa.2210420218
CAS Web of Science® Google Scholar
31 C. P. Flynn, Point Defects and Diffusion, Clarendon Press. Oxford 1972 (p. 481).
Google Scholar
32 Y. Takano and M. Maki, Semiconductor Silicon 1973, Ed. A. R. Huff and R. R. Burgess, Electrochem. Soc. 1973 (p. 469).
Google Scholar
33 K. Yang, R. Anderson, and H. Kappert, Appl. Phys. Letters, 33, 225 (1978).
10.1063/1.90323
CAS Web of Science® Google Scholar

Citing Literature

Volume50, Issue1

16 November 1978

Pages 221-235

Minority carrier lifetime in annealed silicon crystals containing oxygen^†

Abstract

Abstract

References

Citing Literature

References

Information

About Wiley Online Library

Help & Support

Opportunities

Connect with Wiley

Minority carrier lifetime in annealed silicon crystals containing oxygen†

Abstract

Abstract

References

Citing Literature

References

Related

Information

Minority carrier lifetime in annealed silicon crystals containing oxygen^†