Revelation of Dislocations in β-Ga₂O₃ Substrates Grown by Edge-Defined Film-Fed Growth

Chemical Etching

This figure is a schematic drawing of the experimental setup and principle of the synchrotron X-ray topography used for the observation of dislocations in β-Ga₂O₃ crystal. Two types of surface orientation of the samples are indicated in the crystal structure of β-Ga₂O₃ visualized by VESTA software. More details can be found in article number 1900630 by Yongzhao Yao and co-workers.