Volume 217, Issue 3 1900629

Original Paper

Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth

Vladislav Voronenkov,

Corresponding Author

Vladislav Voronenkov

[email protected]

orcid.org/0000-0001-6028-6678

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Natalia Bochkareva,

Natalia Bochkareva

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Andrey Zubrilov,

Andrey Zubrilov

orcid.org/0000-0002-0796-1280

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Yuri Lelikov,

Yuri Lelikov

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Ruslan Gorbunov,

Ruslan Gorbunov

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Philipp Latyshev,

Philipp Latyshev

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Yuri Shreter,

Yuri Shreter

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Vladislav Voronenkov,

Corresponding Author

Vladislav Voronenkov

[email protected]

orcid.org/0000-0001-6028-6678

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Natalia Bochkareva,

Natalia Bochkareva

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Andrey Zubrilov,

Andrey Zubrilov

orcid.org/0000-0002-0796-1280

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Yuri Lelikov,

Yuri Lelikov

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Ruslan Gorbunov,

Ruslan Gorbunov

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Philipp Latyshev,

Philipp Latyshev

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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Yuri Shreter,

Yuri Shreter

Division of Solid State Electronics, Ioffe Institute, Politehnicheskaya 26, St. Petersburg, 194021 Russia

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First published: 10 December 2019

https://doi.org/10.1002/pssa.201900629

Citations: 12

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Abstract

An hydride vapor-phase epitaxy reactor for the growth of bulk GaN crystals with a diameter of 50 mm is developed. Growth rate nonuniformity of 1% is achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically resistant refractory materials are used instead of quartz in the reactor hot zone. High-capacity external gallium precursor sources are developed for the nonstop growth of the bulk GaN layers. A load-lock vacuum chamber and a dry in situ growth chamber cleaning are implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm are grown with the reactor.

Conflict of Interest

The authors declare no conflict of interest.

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Volume217, Issue3

Special Issue:Compound Semiconductors

February 2020

1900629

Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth

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Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth

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Conflict of Interest

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