Temperature-dependent interlayer coupling in Fe3Si/FeSi2 artificial lattices
Corresponding Author
Ken-ichiro Sakai
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, 816-8580 Japan
Department of Control and Information Systems Engineering, Kurume National College of Technology, Kurume, Fukuoka, 830-8555 Japan
Corresponding author: e-mail [email protected], Phone: +81 942 35 9203, Fax: +81 942 35 9307
e-mail [email protected], Phone: +81 92 583 8845, Fax: +81 92 583 8845
Search for more papers by this authorYuta Noda
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, 816-8580 Japan
Search for more papers by this authorDaiki Tsumagari
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, 816-8580 Japan
Search for more papers by this authorHiroyuki Deguchi
Faculty of Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka, 804-8550 Japan
Search for more papers by this authorKaoru Takeda
Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka, 811-0295 Japan
Search for more papers by this authorCorresponding Author
Tsuyoshi Yoshitake
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, 816-8580 Japan
Corresponding author: e-mail [email protected], Phone: +81 942 35 9203, Fax: +81 942 35 9307
e-mail [email protected], Phone: +81 92 583 8845, Fax: +81 92 583 8845
Search for more papers by this authorCorresponding Author
Ken-ichiro Sakai
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, 816-8580 Japan
Department of Control and Information Systems Engineering, Kurume National College of Technology, Kurume, Fukuoka, 830-8555 Japan
Corresponding author: e-mail [email protected], Phone: +81 942 35 9203, Fax: +81 942 35 9307
e-mail [email protected], Phone: +81 92 583 8845, Fax: +81 92 583 8845
Search for more papers by this authorYuta Noda
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, 816-8580 Japan
Search for more papers by this authorDaiki Tsumagari
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, 816-8580 Japan
Search for more papers by this authorHiroyuki Deguchi
Faculty of Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka, 804-8550 Japan
Search for more papers by this authorKaoru Takeda
Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka, 811-0295 Japan
Search for more papers by this authorCorresponding Author
Tsuyoshi Yoshitake
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, 816-8580 Japan
Corresponding author: e-mail [email protected], Phone: +81 942 35 9203, Fax: +81 942 35 9307
e-mail [email protected], Phone: +81 92 583 8845, Fax: +81 92 583 8845
Search for more papers by this authorAbstract
Fe3Si/FeSi2 artificial lattices, wherein ferromagnetic (F)/antiferromagnetic (AF) interlayer coupling between the Fe3Si layers were induced by controlling the thickness of FeSi2 layers, were prepared on Si(111) substrates by facing targets direct-current sputtering. The interlayer couplings were investigated at different temperatures by measuring the magnetization curves. The AF coupling at room temperature was gradually weakened with a decrease in the temperature, and it finally became ferromagnetic or noncoupled at temperatures lower than 77 K. We consider that the FeSi2 layers act as semiconductors and their change in the electric state for the temperature induces the interlayer coupling switching.
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