Volume 208, Issue 7 pp. 1614-1616

Original Paper

AlGaN/GaInN/GaN heterostructure field-effect transistor

Hiromichi Ikki,

Corresponding Author

Hiromichi Ikki

[email protected]

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Phone: 03-5470-3235, Fax: 03-3431-6215Search for more papers by this author

Yasuhiro Isobe,

Yasuhiro Isobe

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Daisuke Iida,

Daisuke Iida

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Motoaki Iwaya,

Motoaki Iwaya

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Tetsuya Takeuchi,

Tetsuya Takeuchi

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Satoshi Kamiyama,

Satoshi Kamiyama

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Isamu Akasaki,

Isamu Akasaki

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Hiroshi Amano,

Hiroshi Amano

Graduate School of Engineering, Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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Akira Bandoh,

Akira Bandoh

Showa Denko K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1893, Japan

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Takashi Udagawa,

Takashi Udagawa

Showa Denko K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1893, Japan

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Hiromichi Ikki,

Corresponding Author

Hiromichi Ikki

[email protected]

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Phone: 03-5470-3235, Fax: 03-3431-6215Search for more papers by this author

Yasuhiro Isobe,

Yasuhiro Isobe

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Search for more papers by this author

Daisuke Iida,

Daisuke Iida

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Search for more papers by this author

Motoaki Iwaya,

Motoaki Iwaya

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Search for more papers by this author

Tetsuya Takeuchi,

Tetsuya Takeuchi

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Satoshi Kamiyama,

Satoshi Kamiyama

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Search for more papers by this author

Isamu Akasaki,

Isamu Akasaki

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Hiroshi Amano,

Hiroshi Amano

Graduate School of Engineering, Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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Akira Bandoh,

Akira Bandoh

Showa Denko K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1893, Japan

Search for more papers by this author

Takashi Udagawa,

Takashi Udagawa

Showa Denko K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1893, Japan

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First published: 16 June 2011

https://doi.org/10.1002/pssa.201001153

Citations: 13

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Abstract

We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 10¹³ cm⁻² at an InN molar fraction of 0.60. The Al_0.30Ga_0.70N/Ga_0.40In_0.60N heterostructure exhibited static field-effect transistor (FET) characteristics.

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Volume208, Issue7

July 2011

Pages 1614-1616

AlGaN/GaInN/GaN heterostructure field-effect transistor

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AlGaN/GaInN/GaN heterostructure field-effect transistor

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