Growth of In2O3 thin films on silicon by the metalorganic chemical vapor deposition method
Nam Ho Kim
School of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea
Search for more papers by this authorJu Hyun Myung
School of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea
Search for more papers by this authorCorresponding Author
Hyoun Woo Kim
School of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea
plus;82 32 860 7544, Fax: +82 32 862 5546Search for more papers by this authorChongmu Lee
School of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea
Search for more papers by this authorNam Ho Kim
School of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea
Search for more papers by this authorJu Hyun Myung
School of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea
Search for more papers by this authorCorresponding Author
Hyoun Woo Kim
School of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea
plus;82 32 860 7544, Fax: +82 32 862 5546Search for more papers by this authorChongmu Lee
School of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea
Search for more papers by this authorAbstract
We have deposited indium oxide (In2O3) films on silicon substrates by the metal organic chemical vapor deposition (MOCVD). We have investigated the effect of substrate temperature on growth and structural properties of films in the range of 200–300 °C. The films had a preferred orientation along [111] direction, with the X-ray diffraction (XRD) full width at half-maximum (FWHM) of less than 0.4°.
References
- [1] K. Hara, T. Horiguchi, T. Kinoshita, K. Sayama, H. Sogihara, and H. Arakawa, Sol. Energy Mater. Sol. Cells 64, 115 (2000).
- [2] K. L. Chopra, S. Major, and D. K. Pandya, Thin Solid Films 102, 1 (1983).
- [3] H. Kominami, T. Nakamura, K. Sowa, Y. Nakanishi, Y. Hatanaka, and G. Shimaoka, Appl. Surf. Sci. 113/114, 519 (1997).
- [4] H. Yamaura, T. Jinkawa, J. Tamaki, K. Moriga, N. Miura, and N. Yamazoe, Sens. Actuators B 35/36, 325 (1996).
- [5] A. Gurlo, N. Barsan, M. Ivanovskaya, U. Weimer, and W. Gopel, Sens. Actuators B 47, 92 (1998).
- [6] M. Z. Atashbar, B. Gong, H. T. Sun, W. Wlodarski, and R. Lamb, Thin Solid Films 354, 222 (1999).
- [7] S. Muranaka, Thin Solid Films 221, 1 (1992).
- [8] S. Naseem, I. A. Rauf, and K. Hussain, Thin Solid Films 156, 161 (1988).
- [9] S. Kasiviswanathan and G. Rangarajan, J. Appl. Phys. 75, 2572 (1994).
- [10] A. S. Ryzhikov, R. B. Vasiliev, M. N. Rumyantseva, L. I. Ryabova, G. A. Dosovitsky, A. M. Gilmutdinov, V. F. Kozlovsky, and A. M. Gaskov, Mater. Sci. Eng. B 96, 268 (2002).
- [11] C. Grivas, D. S. Gill, S. Mailis, L. Boutsikaris, and N. A. Vainos, Appl. Phys. A 66, 201 (1998).
- [12] M. Bender, N. Katsarakis, E. Gagaoudakis, E. Hourdakis, E. Douloufakis, V. Cimalla, and G. Kiriakidis, J. Appl. Phys. 90, 5382 (2001).
- [13] M. G. Mikhailov, T. M. Ratcheva, and M. D. Nanova, Thin Solid Films 146, L23 (1987).
- [14] M. Girtan, H. Cachet, and G. I. Rusu, Thin Solid Films 427, 406 (2003).
- [15] J.-H. Lee and B.-O. Park, Surf. Coat. Technol. 184, 102 (2004).
- [16] J. J. Prince, S. Ramamurthy, B. Subramanian, C. Sanjeeviraja, and M. Jayachandran, J. Cryst. Growth 240, 142 (2002).
- [17] T. Asikainen, M. Ritala, W.-M. Li, R. Lappalainen, and M. Leskelä, Appl. Surf. Sci. 112, 231 (1997).
- [18] V. D. Das, S. Kirupavathy, L. Damodare, and N. Lakshminarayan, J. Appl. Phys. 79, 8521 (1996).
- [19] J. S. Cho, K. H. Yoon, and S. K. Koh, J. Electrochem. Soc. 147, 1065 (2000).
- [20] F. O. Adurodija, H. Izumi, T. Ishihara, H. Yoshioka, H. Matsui, and M. Motoyama, Appl. Phys. Lett. 74, 3059 (1999).
- [21] E. J. Tarsa, J. H. English, and J. S. Speck, Appl. Phys. Lett. 62, 2332 (1993).
- [22] Y. Yamada, N. Suzuki, T. Makino, and T. Yoshida, J. Vac. Sci. Technol. A 18, 83 (2000).
- [23] M. Girtan, Surf. Coat. Technol. 184, 219 (2004).
- [24] T. Y. Chou, Y. Chi, S. F. Huang, C. S. Liu, A. J. Carty, L. Scoles, and K. A. Uclachin, Inorg. Chem. 42, 6041 (2003).
- [25] O. O. Akinwunmi, M. A. Eleruja, J. O. Olowolafe, G. A. Adegboyega, and E. O. B. Ajayi, Opt. Mater. 13, 255 (1999).
- [26] W. Luo, P. Pen, C. Tan, and Z. Tan, J. de Physique II 1, 961 (1991).
- [27] H. W. Kim and N. H. Kim, Appl. Surf. Sci. 230, 301 (2004).
- [28] B. D. Cullity, Elements of X-ray diffraction (Addison-Wesley, 1978), p. 100.
