Volume 197, Issue 1 p. 3
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Proceedings of the 3rd International Conference Porous Semiconductors – Science and Technology

Leigh Canham

Leigh Canham

pSiMedica Ltd, Malvern Hills Science Park, Geraldine Road, Malvern, Worcs, WR14 3SZ, UK

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Androula Nassiopoulou

Androula Nassiopoulou

Institute of Microelectronics (IMEL), National Center for Scientific Research “Demokritos”, 153 10 Ag. Paraskevi Attikis, Athens, Greece

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Vitali Parkhutik

Vitali Parkhutik

Departamento de Ingeniería Mecánica y de Materiales, Universidad Politécnica de Valencia, Cami de Vera s/n, 46022 Valencia, Spain

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First published: 30 April 2003
Citations: 9

Abstract

The 3rd International Conference “Porous Semiconductors – Science and Technology” (PSST-2002) took place in Puerto de la Cruz, Tenerife, Spain, 10–15 March 2002. The meeting critically analyzed the progress in the field of porous semiconductors during two years that passed since the previous PSST-2000 event, whose proceedings were also published in phys. stat. sol. (a) 182, No. 1 (2000). The empha-sis was kept not only on breakthroughs in understanding the mechanism of growth and physical properties and critical issues in luminescence-related applications, but also new applications of porous semiconductors in natural and life sciences, as well in technology were presented. The conference served to join researchers active in physics and chemistry of semiconductors, optics, electrochemistry, analytical instrumentation, biochemistry and other related fields.

The proceedings will be continued in the next issue of phys. stat. sol. (a) 197, No. 2 (2003).

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