Volume 197, Issue 1 pp. 168-174
Original Paper

Interface investigations of iron and cobalt metallized porous silicon: AES and FTIR analyses

F. Hamadache

F. Hamadache

Département des Matériaux et Composants, Université des Sciences et de la Technologie “Houari Boumédiene”, B.P. 32 El-Alia, 16111 Bab-Ezzouar Alger, Algeria

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C. Renaux

C. Renaux

Laboratoire de Microélectronique, Université Catholique de Louvain, Place du Levant 3, 1348 Louvain-la-Neuve, Belgium

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J.-L. Duvail

J.-L. Duvail

Laboratoire de Physique Cristalline, Institut des Matériaux de Nantes, 2, Rue de la Houssinière, 44322 Nantes cedex 03, France

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P. Bertrand

P. Bertrand

Unité de Physico-Chimie et de Physique des Matériaux, Université Catholique de Louvain, Croix du Sud 1, 1348 Louvain-la-Neuve, Belgium

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First published: 30 April 2003
Citations: 32

Abstract

Porous silicon (PS) is characterized by a very large surface that is very reactive with the external environment. In this work, the chemical composition of the internal surface of both freshly anodically formed and electroplated PS with Fe and Co metals was studied. The samples were analyzed by scanning electron microscopy (SEM), Fourier transform infrared absorption spectroscopy (FTIR) and Auger electron spectroscopy (AES) combined to sputter depth profiling. Mesoporous structures with different morphologies were obtained in p-type Si(100) anodized in ethanoic hydrofluoric acid solutions. We showed that the surface of as-prepared PS is practically oxide-free and H-terminated, whereas the metal deposition process oxidizes the pore walls. Nevertheless, silicon atoms from PS surface are likely bonded to iron and cobalt ones.

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