Volume 197, Issue 1 pp. 128-131
Original Paper

Role of hydrogen in the separation of a porous Si layer in a layer transfer process

R. Bilyalov

Corresponding Author

R. Bilyalov

IMECvzw, Kapeldreef 75, Leuven 3001, Belgium

Tel.: +32 16 281 545, Fax: +32 16 281 501Search for more papers by this author
C. S. Solanki

C. S. Solanki

IMECvzw, Kapeldreef 75, Leuven 3001, Belgium

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J. Poortmans

J. Poortmans

IMECvzw, Kapeldreef 75, Leuven 3001, Belgium

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A. Ulyashin

A. Ulyashin

University of Hagen, PO Box 940, 58084 Hagen, Germany

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R. Job

R. Job

University of Hagen, PO Box 940, 58084 Hagen, Germany

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W. Fahrner

W. Fahrner

University of Hagen, PO Box 940, 58084 Hagen, Germany

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First published: 23 April 2003
Citations: 2

Abstract

The role of hydrogen in a recently developed one-step method for the formation and separation of a thin porous Si film from the initial Si substrate is investigated by means of Raman spectroscopy and detailed morphological analysis. It is shown that hydrogen plays a crucial role in the formation and separation of the porous Si film. Micro-Raman spectroscopy reveals that hydrogen in molecular form is accumulated in the micropores and creates hydrodynamic pressure which could be strong enough to break the thin pore walls in a high-porosity layer. As a result the upper porous Si film is separated from the original substrate. The kinetics of the process is confirmed by transmission and scanning electron microscopy.

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