Original Paper

Anodic oxidation of p⁺-type porous silicon having pores uniformly covered with Ge

Corresponding Author

B. Gelloz

[email protected]

Department of Electronics and Electrical Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184 8588, Japan

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A. Halimaoui,

A. Halimaoui

France Telecom-CNET Grenoble, BP 98, 38243 Meylan Cedex, France

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Y. Campidelli,

Y. Campidelli

France Telecom-CNET Grenoble, BP 98, 38243 Meylan Cedex, France

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A. Bsiesy,

A. Bsiesy

Laboratoire de Spectrométrie Physique, Université Joseph Fourier de Grenoble I, CNRS, UMR 5588, BP 87, 38402 Saint Martin d'Hères Cedex, France

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N. Koshida,

N. Koshida

Department of Electronics and Electrical Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184 8588, Japan

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R. Herino,

R. Herino

Laboratoire de Spectrométrie Physique, Université Joseph Fourier de Grenoble I, CNRS, UMR 5588, BP 87, 38402 Saint Martin d'Hères Cedex, France

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B. Gelloz,

Corresponding Author

B. Gelloz

[email protected]

Department of Electronics and Electrical Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184 8588, Japan

Fax: +81 (0)42 385 5395Search for more papers by this author

A. Halimaoui,

A. Halimaoui

France Telecom-CNET Grenoble, BP 98, 38243 Meylan Cedex, France

Search for more papers by this author

Y. Campidelli,

Y. Campidelli

France Telecom-CNET Grenoble, BP 98, 38243 Meylan Cedex, France

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A. Bsiesy,

A. Bsiesy

Laboratoire de Spectrométrie Physique, Université Joseph Fourier de Grenoble I, CNRS, UMR 5588, BP 87, 38402 Saint Martin d'Hères Cedex, France

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N. Koshida,

N. Koshida

Department of Electronics and Electrical Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184 8588, Japan

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R. Herino,

R. Herino

Laboratoire de Spectrométrie Physique, Université Joseph Fourier de Grenoble I, CNRS, UMR 5588, BP 87, 38402 Saint Martin d'Hères Cedex, France

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First published: 23 April 2003

https://doi.org/10.1002/pssa.200306486

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Abstract

Anodic oxidation of porous silicon, the inner surface of which is covered by a thin layer of Ge, has been studied. The Ge layer is first oxidized during a time proportional to the amount of Ge, prior to oxidation of the porous silicon. It is shown how anodic oxidation can be used as a new method for the measurement of the amount of Ge incorporated into porous silicon pores. It is also a valuable technique for evaluating the homogeneity of the Ge coverage.

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Volume197, Issue1

May 2003

Pages 123-127

Anodic oxidation of p⁺-type porous silicon having pores uniformly covered with Ge

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Anodic oxidation of p⁺-type porous silicon having pores uniformly covered with Ge