Analysis of morphology of porous silicon layers using Flicker noise spectroscopy

In this work we analyze the surface roughness of porous silicon films and show that it is possible to quantify some fine differences in the morphology of different samples and even in different points of the surface of one sample using a novel method of Flicker Noise Spectroscopy (FNS). High informative potential of the method is now illustrated by applying it to the analysis of laterally non-uniform porous silicon films produced by the local anodization of silicon using a point cathode placed in the vicinity of the silicon wafer. The possibilities for future explorations are shown.