Formation of porous layers on InSb(100) by anodization
L. Santinacci
University of Erlangen-Nürnberg, Dept. of Materials Science, LKO, Martensstr. 7, 91058 Erlangen, Germany
Search for more papers by this authorD. J. Lockwood
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Search for more papers by this authorM. J. Graham
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Search for more papers by this authorL. Santinacci
University of Erlangen-Nürnberg, Dept. of Materials Science, LKO, Martensstr. 7, 91058 Erlangen, Germany
Search for more papers by this authorD. J. Lockwood
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Search for more papers by this authorM. J. Graham
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Search for more papers by this authorAbstract
The present work deals with anodization processes of n-type InSb(100). Preferential etching of InSb can be electrochemically initiated in HCl HBr and HF solutions. Except for etch features also the formation of porous layers can be observed. The resulting features were characterized by SEM and AES measurements. Due to the narrow bandgap of the material the results of the anodization process are neither sensitive to illumination of the n-type material nor to the doping level. The morphology of the attack depends strongly on the electrochemical conditions and the type of halogen acid present in the electrolyte. In HCl and HBr a black porous layer can be formed that is likely to consist to a certain extent of an antimony-oxo-chloride or antimony-oxo-bromide.
In HF, however, polarization under a wide range of electrochemical conditions leads to a uniform etching of the InSb surface.
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