Porous III–V compound semiconductors: formation, properties, and comparison to silicon
Corresponding Author
H. Föll
Materials Science, Faculty of Engineering, University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany
Phone: + 49 431 880-6175, Fax: -6178Search for more papers by this authorJ. Carstensen
Materials Science, Faculty of Engineering, University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany
Search for more papers by this authorS. Langa
Materials Science, Faculty of Engineering, University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany
Technical University of Moldova, Chisinau, Moldova
Search for more papers by this authorM. Christophersen
Materials Science, Faculty of Engineering, University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany
Search for more papers by this authorI. M. Tiginyanu
Technical University of Moldova, Chisinau, Moldova
Search for more papers by this authorCorresponding Author
H. Föll
Materials Science, Faculty of Engineering, University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany
Phone: + 49 431 880-6175, Fax: -6178Search for more papers by this authorJ. Carstensen
Materials Science, Faculty of Engineering, University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany
Search for more papers by this authorS. Langa
Materials Science, Faculty of Engineering, University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany
Technical University of Moldova, Chisinau, Moldova
Search for more papers by this authorM. Christophersen
Materials Science, Faculty of Engineering, University of Kiel, Kaiserstr. 2, 24143 Kiel, Germany
Search for more papers by this authorI. M. Tiginyanu
Technical University of Moldova, Chisinau, Moldova
Search for more papers by this authorAbstract
Pore formation in n-type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the “pore zoology” in III–Vs was rather limited until recently. This paper will briefly review the specific pore morphologies in some compound semiconductors, nucleation and formation mechanisms, the relation to comparable Si pores (including some new observation in Si), and the particularly striking features that pores in III-semiconductors exhibit many features of self organization and on occasion peculiar luminescence properties.
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