Strains in macroporous silicon introduced by cyclic oxidation

Regular trends of macroporous silicon wafer deformation under high-temperature oxidation are revealed, and the basic parameters describing the sample bending and subsequent stress relaxation on the oxide removal are determined. High-resolution X-ray diffractometry and topography studies have been used to deduce the sample bending radius and the lattice parameters, and to define the areas of the dislocation generation. On repeated oxidation with intermediate oxide removing, a “memory” effect has been observed.