Harmonic device line simulation of negative resistance microwave mesfet oscillators
Abstract
In this paper, the effects of harmonic load impedance of the terminating network on the input impedance and the output power of the equivalent one-port negative resistance MESFET oscillators are investigated. Harmonic balance techniques in conjunction with a nonlinear MESFET transistor model are used to simulate the nonlinear response of such one-port negative resistance oscillators. An appropriate Fourier development of steady state voltage and a current wave forms obtained for a given amplitude and frequency signal are used to calculate the input negative resistance and reactance in device line simulations. It was found that the output power of a one-port negative resistance MESFET oscillator can be maximized by optimizing the harmonic load impedances of the terminating network.
