The design of integrated 0.13-μm CMOS receiver for ultra-wideband systems

A fully integrated 0.13-μm CMOS receiver for ultra-wideband systems is implemented. This receiver enables eight bands of operation covering 3.1–9.0 GHz. The system, based on the Multiband OFDM Alliance standard proposal and consisting of a direct-conversion receiver chain and required noise figure, is discussed. The average conversion gain and input P1dB are 67.3 dB and −25.4 dBm, respectively. The shunt-series feedback low-noise amplifier provides a receiver front-end noise figure of 7.1–9.5 dB over the entire band. The mixer, based on a folded-cascode topology, also implements a four-stage programmable gain amplifier. A fabricated die has been bonded and molded onto PCB for characterization. The receiver chip dissipates 48 mA from 1.2 V power supply. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:841–845, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25083