Volume 52, Issue 4 pp. 984-987

Characterization of uni-traveling carrier photodiodes for high-linearity and high-SNR applications

Andreas O. J. Wiberg

Corresponding Author

Andreas O. J. Wiberg

Electrical and Computer Engineering, University of California San Diego, La Jolla, CA

Electrical and Computer Engineering, University of California San Diego, La Jolla, CASearch for more papers by this author
Josip Vukusic

Josip Vukusic

Electrical and Computer Engineering, University of California San Diego, La Jolla, CA

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Henrik Sunnerud

Henrik Sunnerud

Electrical and Computer Engineering, University of California San Diego, La Jolla, CA

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Jan Stake

Jan Stake

Electrical and Computer Engineering, University of California San Diego, La Jolla, CA

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Peter A. Andrekson

Peter A. Andrekson

Electrical and Computer Engineering, University of California San Diego, La Jolla, CA

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First published: 16 February 2010

Abstract

A typical uni-traveling carrier photodiode (UTC-PD) and a commercial PIN-PD are compared in the context of the analog performance at 10 GHz in a realistic noise environment.The behavior of the carrier-to-noise ratio (CNR), the linearity, represented by the third-order output intercept point (OIP3), and the spurious free dynamic range are studied as a function of photocurrent. We have found that the increment of the CNR is only minor because of excess noise of the amplifier, as an optical amplifier is used to reach high optical power. However, the OIP3 of the UTC-PD is substantially higher and increases with photocurrent, in contrast to the PIN-PD. Thus, even though the responsivity is lower, it is beneficial to use a UTC-PD to have superior dynamic range. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:984–987, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25055

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