Microwave and Optical Technology Letters

A new analytical method to extract the small-signal equivalent circuit of high frequency FET transistors

J. L. Olvera Cervantes

Electronic and Telecommunication Department, CICESE Research Center, Km 107 Carretera Tijuana-Ensenada, 22860 Ensenada, B. C., México

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J. L. Medina Monroy,

J. L. Medina Monroy

Electronic and Telecommunication Department, CICESE Research Center, Km 107 Carretera Tijuana-Ensenada, 22860 Ensenada, B. C., México

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R. A. Chávez Pérez,

R. A. Chávez Pérez

Electronic and Telecommunication Department, CICESE Research Center, Km 107 Carretera Tijuana-Ensenada, 22860 Ensenada, B. C., México

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A. Velázquez Ventura,

A. Velázquez Ventura

Electronic and Telecommunication Department, CICESE Research Center, Km 107 Carretera Tijuana-Ensenada, 22860 Ensenada, B. C., México

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J. L. Olvera Cervantes,

J. L. Olvera Cervantes

Electronic and Telecommunication Department, CICESE Research Center, Km 107 Carretera Tijuana-Ensenada, 22860 Ensenada, B. C., México

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J. L. Medina Monroy,

J. L. Medina Monroy

Electronic and Telecommunication Department, CICESE Research Center, Km 107 Carretera Tijuana-Ensenada, 22860 Ensenada, B. C., México

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R. A. Chávez Pérez,

R. A. Chávez Pérez

Electronic and Telecommunication Department, CICESE Research Center, Km 107 Carretera Tijuana-Ensenada, 22860 Ensenada, B. C., México

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A. Velázquez Ventura,

A. Velázquez Ventura

Electronic and Telecommunication Department, CICESE Research Center, Km 107 Carretera Tijuana-Ensenada, 22860 Ensenada, B. C., México

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First published: 20 December 2007

https://doi.org/10.1002/mop.23130

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Abstract

A new set of simply analytical equations is proposed as an alternative method to calculate the intrinsic transistor elements of an extended model for microwave FET's. This method is based on Y-parameters as well as on a new process to determine the differential resistances R_fs and R_fd, including the frequency effect, in such way that measurements at very low frequencies are not required and long iterative methods are avoided. The method was applied to FET's transistors and the validity of the model is certified by direct comparison with measured data from 1 to 45 GHz. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 453–457, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23130

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Volume50, Issue2

February 2008

Pages 453-457

A new analytical method to extract the small-signal equivalent circuit of high frequency FET transistors

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A new analytical method to extract the small-signal equivalent circuit of high frequency FET transistors

Abstract

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