Microwave and Optical Technology Letters

Semiempirical model for admittance and scattering parameters of GaN MESFET for microwave circuit applications

Sneha Kabra

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, India

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Harsupreet Kaur,

Harsupreet Kaur

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, India

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Subhasis Haldar,

Subhasis Haldar

Department of Physics, Motilal Nehru College, University of Delhi, South Campus, New Delhi 110 021, India

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Mridula Gupta,

Mridula Gupta

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, India

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R. S. Gupta,

Corresponding Author

R. S. Gupta

[email protected]

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, India

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, IndiaSearch for more papers by this author

Sneha Kabra,

Sneha Kabra

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, India

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Harsupreet Kaur,

Harsupreet Kaur

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, India

Search for more papers by this author

Subhasis Haldar,

Subhasis Haldar

Department of Physics, Motilal Nehru College, University of Delhi, South Campus, New Delhi 110 021, India

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Mridula Gupta,

Mridula Gupta

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, India

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R. S. Gupta,

Corresponding Author

R. S. Gupta

[email protected]

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, India

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, IndiaSearch for more papers by this author

First published: 27 July 2007

https://doi.org/10.1002/mop.22744

Citations: 1

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Abstract

A semiempirical model of GaN MESFET to evaluate admittance parameters, scattering parameters, maximum unilateral transducer power gain, and maximum stable gain is presented. Frequency dependence of the parasitic capacitances obtained by simulations has been utilized to develop the model. Results have been verified using ATLAS 2D device simulator and are also compared with parasitic element-dependent model. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2446–2450, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22744

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Volume49, Issue10

October 2007

Pages 2446-2450

Semiempirical model for admittance and scattering parameters of GaN MESFET for microwave circuit applications

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Semiempirical model for admittance and scattering parameters of GaN MESFET for microwave circuit applications

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