Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge-source DMDG TFET
Corresponding Author
Rajesh Saha
Department of Electronics and Communication Engineering, Malaviya National Institute of Technology, Jaipur, Rajasthan, India
Correspondence
Rajesh Saha, Department of Electronics and Communication Engineering, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, India.
Email: [email protected]
Search for more papers by this authorDeepak Kumar Panda
School of Electronics, VIT AP University, Amaravati, Andhra Pradesh, India
Search for more papers by this authorRupam Goswami
School of Electronics, Tezpur University, Tezpur, Assam, India
Search for more papers by this authorBrinda Bhowmick
Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, India
Search for more papers by this authorSrimanta Baishya
Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, India
Search for more papers by this authorCorresponding Author
Rajesh Saha
Department of Electronics and Communication Engineering, Malaviya National Institute of Technology, Jaipur, Rajasthan, India
Correspondence
Rajesh Saha, Department of Electronics and Communication Engineering, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, India.
Email: [email protected]
Search for more papers by this authorDeepak Kumar Panda
School of Electronics, VIT AP University, Amaravati, Andhra Pradesh, India
Search for more papers by this authorRupam Goswami
School of Electronics, Tezpur University, Tezpur, Assam, India
Search for more papers by this authorBrinda Bhowmick
Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, India
Search for more papers by this authorSrimanta Baishya
Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, India
Search for more papers by this authorFunding information: Science and Engineering Research Board, Grant/Award Number: SRG/2019/000628
Abstract
The diffusion of doping concentration in source/drain regions through ion implantation technique extents to the channel, which decreases the inversion portion of channel and results in variation of device behavior. In this paper, by merging the advantages of Ge-source TFET and dual material gate (DMG) TFET, a new device named as Ge-source dual material double gate (DMDG) TFET is proposed. We have investigated DC parameters like drain current vs gate bias, drain current vs drain bias, subthreshold swing (SS), and current ratio (ION/IOFF) by changing the lateral straggle parameter (σ) from 0 to 5 nm through TCAD device simulator in proposed TFET. The RF/analog behavior like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), total gate capacitance (Cgg), cut-off frequency (fc), transconductance generation factor (TGF), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) are reported for different σ values in proposed TFET. It is found that both DC and RF/analog figure of merits are a function of σ. It is perceived that ION as well as RF/analog characteristics are improved, whereas, short channel parameter degrades with increase in σ. Finally, the effect of σ on noise performance and s-parameters are highlighted in proposed device.
Open Research
DATA AVAILABILITY STATEMENT
This manuscript does not have any data availability
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