International Journal of RF and Microwave Computer-Aided Engineering

Volume 17, Issue 2 pp. 243-251

Research Article

Design of a 4.2–5.4 GHz differential LC VCO using 0.35 μm SiGe BiCMOS technology for IEEE 802.11a applications

Onur Esame,

Onur Esame

Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, Turkey

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Ibrahim Tekin,

Ibrahim Tekin

Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, Turkey

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Ayhan Bozkurt,

Ayhan Bozkurt

Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, Turkey

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Yasar Gurbuz,

Corresponding Author

Yasar Gurbuz

[email protected]

Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, Turkey

Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, TurkeySearch for more papers by this author

Onur Esame,

Onur Esame

Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, Turkey

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Ibrahim Tekin,

Ibrahim Tekin

Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, Turkey

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Ayhan Bozkurt,

Ayhan Bozkurt

Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, Turkey

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Yasar Gurbuz,

Corresponding Author

Yasar Gurbuz

[email protected]

Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, Turkey

Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, TurkeySearch for more papers by this author

First published: 01 March 2007

https://doi.org/10.1002/mmce.20218

Citations: 1

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Abstract

In this paper, a 4.2–5.4 GHz, −Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 μm SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is −110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and −113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm² on Si substrate, including DC and RF pads. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.

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Design of a 4.2–5.4 GHz differential LC VCO using 0.35 μm SiGe BiCMOS technology for IEEE 802.11a applications

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Design of a 4.2–5.4 GHz differential LC VCO using 0.35 μm SiGe BiCMOS technology for IEEE 802.11a applications

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