2D Black Phosphorus Infrared Photodetectors
Corresponding Author
Xianjun Zhu
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
E-mail: [email protected], [email protected]
Search for more papers by this authorZheng Cai
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
Search for more papers by this authorQihan Wu
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
Search for more papers by this authorJinlong Wu
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
Search for more papers by this authorShujuan Liu
State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023 China
Search for more papers by this authorXiang Chen
School of Materials Science and Engineering, Anhui University of Technology, Maanshan, 243002 P. R. China
Search for more papers by this authorCorresponding Author
Qiang Zhao
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023 China
E-mail: [email protected], [email protected]
Search for more papers by this authorCorresponding Author
Xianjun Zhu
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
E-mail: [email protected], [email protected]
Search for more papers by this authorZheng Cai
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
Search for more papers by this authorQihan Wu
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
Search for more papers by this authorJinlong Wu
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
Search for more papers by this authorShujuan Liu
State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023 China
Search for more papers by this authorXiang Chen
School of Materials Science and Engineering, Anhui University of Technology, Maanshan, 243002 P. R. China
Search for more papers by this authorCorresponding Author
Qiang Zhao
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023 China
State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023 China
E-mail: [email protected], [email protected]
Search for more papers by this authorAbstract
2D black phosphorus (b-P) possesses several remarkable properties, including ambipolar transport, high carrier mobility, in-plane anisotropy, polarization sensitivity, a narrow direct bandgap that can be tuned with the number of layers, and highly compatible with silicon-based technologies. These characteristics make it a promising material for photodetection in the near-infrared to mid-infrared range. However, to date, most of the reviews on b-P are centered around electronic and optoelectronic devices, with few specifically addressing infrared detection. Herein, the recent research progress on b-P infrared detectors is summarized in this review. This article introduces the principle of optoelectronic detection, the main properties of 2D b-P, the development history of b-P fabrication methods, presents and discusses the performance and characteristics of various infrared photodetectors based on different structures of 2D b-P that have been researched in recent years. Finally, the challenges that may be faced by black phosphorus-based infrared photoelectric detectors are briefly introduced, and the potential application directions are discussed from the perspective of large-scale production and practical application. This article provides an in-depth analysis and evaluation of the future development prospects of 2D b-P materials as a potential excellent candidate of infrared photodetectors.
Conflict of Interest
The authors declare no conflict of interest.
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