Incorporating DC bias voltage in poly-harmonic distortion modeling for RF power GaN transistors
Shuhao Cheng
The Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China
Search for more papers by this authorXiaoqiang Tang
The Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China
Search for more papers by this authorZlatica Marinković
Faculty of Electronic Engineering, University of Niš, Niš, Serbia
Search for more papers by this authorGiovanni Crupi
BIOMORF Department, University of Messina, Messina, Italy
Search for more papers by this authorCorresponding Author
Jialin Cai
The Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China
Correspondence
Jialin Cai, The Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China.
Email: [email protected]
Search for more papers by this authorShuhao Cheng
The Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China
Search for more papers by this authorXiaoqiang Tang
The Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China
Search for more papers by this authorZlatica Marinković
Faculty of Electronic Engineering, University of Niš, Niš, Serbia
Search for more papers by this authorGiovanni Crupi
BIOMORF Department, University of Messina, Messina, Italy
Search for more papers by this authorCorresponding Author
Jialin Cai
The Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China
Correspondence
Jialin Cai, The Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China.
Email: [email protected]
Search for more papers by this authorAbstract
This paper presents a novel poly-harmonic distortion (PHD) model that incorporates the DC input and output bias voltages using Gaussian process regression (GPR). Simulation tests were conducted using a 10-W gallium nitride (GaN) HEMT transistor from Wolfspeed, and the model implementation test was performed in the Keysight Advanced Design System environment. The results showed that the GPR-based PHD model exhibited good performance in predicting both fundamental and harmonic behaviors over a wide range of bias variations with significant advantages over basic linear regression methods. Additionally, the model accurately predicted load-pull simulations. The measurement test was conducted using a 6-W GaN device, and the results showed a mean error of 2.22% and 4.54% for the fundamental and second harmonic of the reflected wave, respectively.
Open Research
DATA AVAILABILITY STATEMENT
Data sharing not applicable to this article as no datasets were generated or analysed during the current study.
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