Volume 71, Issue 12 pp. 20-27
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Design and fabrication of GaAs hall IC with SCFL Schmitt Trigger

Keijiro Itakura

Keijiro Itakura

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Electronics Research Laboratory, Matsushita Electronics Corporation, Takatsuki, Japan 569

Keijiro Itakura received his B.S. and M.S. degrees in Applied Physics from Osaka University in 1984 and 1986, respectively. In 1986 he joined Matsushita Electronics Gorp., and since then has been engaged in the research on GaAs devices and integrated circuits. Presently, he is with the First Department of Electronics Research Laboratory, Matsushita Electronics Corps.

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Hiroaki Asada

Hiroaki Asada

Member

Electronics Research Laboratory, Matsushita Electronics Corporation, Takatsuki, Japan 569

Hiroaki Asada received his B.S. and M.S. degrees in Electrical Engineering from Osaka University in 1983 and 1985, respectively. In 1985 he joined Matsushita Electronics Corp., and since then has been engaged in research on GaAs high-speed devices and integrated circuits. Presently, he is with the First Department of Electronics Research Laboratory, Matsushita Electronics Corp.

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Daisuke Ueda

Daisuke Ueda

Member

Electronics Research Laboratory, Matsushita Electronics Corporation, Takatsuki, Japan 569

Daisuke Ueda received his B.S. and M.S. degrees in Electronics Engineering from Kyushu Institute of Technology in 1977 and 1979, respectively. He received his Ph.D. in Electronics Engineering from Osaka University in 1986. In 1979 he joined Matsushita Electronics Corp., and since then has been engaged in the development of power FETs in the Electronics Research Laboratory. Presently, he is a senior researcher in the Fourth Section of the Finiinrinsint Department of the Laboratory.

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Hiromitsu Takagi

Hiromitsu Takagi

Member

Electronics Research Laboratory, Matsushita Electronics Corporation, Takatsuki, Japan 569

Hiromitsu Takagi received his B.S., M.S. and Ph.D. degrees in Electronics Engineering In 1973 he from the University of Osaka Prefecture in 1971, 1973, and 1982, respectively, joined Matsushita Electronics Corp. Since then he has been engaged in research on functional integrated circuit devices, compound semiconductor integrated circuit devices, and ultrahigh-density integrated circuit devices. Presently, he is the head of the First Section of the First Department of Electronics Research Laboratory.

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Abstract

A GaAs monolithic Hall IC with superior temperature characteristics has been designed and fabricated by taking advantage of such GaAs material properties as large bandgap and high electron mobility. This IC is designed with SCFL circuits, operates with only a 5-V power supply, and switches ON and OFF depending on the magnetic field intensity. In addition, it contains a Schmitt trigger circuit to prevent a malfunction by magnetic noise. As a result of designing for low power consumption, the power/current of the IC is approximately 17 mW/3 mA. According to the measurement, the magnetoelectric conversion characteristics and the power consumption of the IC do not show a noticeable change even at the ambient temperature of 150°C.

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