The basic configuration and characteristics of an actively mode-locked semiconductor laser integrated with an electroabsorption optical modulator are described theoretically and experimentally. With regard to 1.55-µm 40-GHz semiconductor mode-locked lasers integrated with distributed Bragg reflectors with different bandwidths, the results of numerical analysis and experimental evaluations are described. By means of increasing the bandwidth of the distributed Bragg reflector, the optical spectrum is expanded and short pulses with a pulse width of 1.6 ps after linear compression by anomalous dispersion are generated. © 2005 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 88(9): 1–9, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.20193

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Volume88, Issue9

September 2005

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Semiconductor mode-locked lasers integrated with electroabsorption optical modulators

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Semiconductor mode-locked lasers integrated with electroabsorption optical modulators

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