International Journal of Circuit Theory and Applications

Volume 52, Issue 3 pp. 1450-1464

ORIGINAL PAPER

A GHz-level memristor emulator with only MOSFET

Lei Zhou,

Corresponding Author

Lei Zhou

[email protected]

School of Electrical Engineering, Yancheng Institute of Technology, Yancheng, Jiangsu, China

Correspondence

Lei Zhou, School of Electrical Engineering, Yancheng Institute of Technology, No. 1, Hope Avenue Road, Tinghu district, Yancheng, Jiangsu, China.

Email: [email protected]

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Chune Wang,

Chune Wang

School of Material Science Engineering, Yancheng Institute of Technology, Yancheng, Jiangsu, China

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Xiaozhong Chen,

Xiaozhong Chen

School of Intelligent Manufacturing, Changzhou Vocational Institute of Engineering, Changzhou, China

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Lei Zhou,

Corresponding Author

Lei Zhou

[email protected]

School of Electrical Engineering, Yancheng Institute of Technology, Yancheng, Jiangsu, China

Correspondence

Lei Zhou, School of Electrical Engineering, Yancheng Institute of Technology, No. 1, Hope Avenue Road, Tinghu district, Yancheng, Jiangsu, China.

Email: [email protected]

Search for more papers by this author

Chune Wang,

Chune Wang

School of Material Science Engineering, Yancheng Institute of Technology, Yancheng, Jiangsu, China

Search for more papers by this author

Xiaozhong Chen,

Xiaozhong Chen

School of Intelligent Manufacturing, Changzhou Vocational Institute of Engineering, Changzhou, China

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First published: 18 September 2023

https://doi.org/10.1002/cta.3809

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Summary

The MOS-only memristor only uses the transistor's intrinsic capacitance to realize the memristor's memory effect, which is beneficial to increase its operating frequency and reduce its occupied chip area. This paper proposes a GHz-level MOS-only memristor emulator (i.e., PGME and NGME). PGME/NGME consists of three/four MOSFETs without any external elements and power supplies. The operating frequency of PGME/NGME is high up to 5 GHz. When the three/four MOSFETs in PGME are pch_hvts of TSMC's 65-nm process, the occupied chip areas of PGME-3, PGME-4A, and PGME-4B are 3.9 ∗ 2.7 $μ$ m², 4.3 ∗ 3.3 $μ$ m², and 4.3 ∗ 4.4 $μ$ m², respectively. The minimum step time of material implication circuit based on PGME-3 and NGME-3 is only 70 ps. Additionally, a chaotic oscillator circuit based on PGME-4A is presented and verified with discrete p-channel MOSFETs of CD4007.

Open Research

DATA AVAILABILITY STATEMENT

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Volume52, Issue3

March 2024

Pages 1450-1464

A GHz-level memristor emulator with only MOSFET

Summary

Open Research

DATA AVAILABILITY STATEMENT

REFERENCES

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A GHz-level memristor emulator with only MOSFET

Summary

Open Research

DATA AVAILABILITY STATEMENT

REFERENCES

References

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