Volume 32, Issue 18
Preparative Inorganic Chemistry
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ChemInform Abstract: Preparation of Ge3N4 Films on the Germanium Surface.

I. G. Nakhutsrishvili

I. G. Nakhutsrishvili

Inst. kibern., Akad. nauk Gruzii, Tbilisi, Georgia

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D. A. Dzhishiashvili

D. A. Dzhishiashvili

Inst. kibern., Akad. nauk Gruzii, Tbilisi, Georgia

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E. B. Miminoshvili

E. B. Miminoshvili

Inst. kibern., Akad. nauk Gruzii, Tbilisi, Georgia

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M. A. Mushkudiani

M. A. Mushkudiani

Inst. kibern., Akad. nauk Gruzii, Tbilisi, Georgia

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First published: 27 May 2010

Abstract

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ChemInform Abstract

Reaction of germanium single crystals with dry ammonia at 800°C results in the formation of single-phase β-Ge3N4 surface films.

    The full text of this article hosted at iucr.org is unavailable due to technical difficulties.