Volume 24, Issue 22
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ChemInform Abstract: Overwrite Repeatability of GeSbTe Phase-Change-Type Optical Disk Media.

H. YAMAZAKI

H. YAMAZAKI

NTT Interdiscip. Res. Lab., Masashino, Tokyo 180, Japan

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Y. SUGIYAMA

Y. SUGIYAMA

NTT Interdiscip. Res. Lab., Masashino, Tokyo 180, Japan

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R. CHIBA

R. CHIBA

NTT Interdiscip. Res. Lab., Masashino, Tokyo 180, Japan

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S. YAGI

S. YAGI

NTT Interdiscip. Res. Lab., Masashino, Tokyo 180, Japan

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First published: June 1, 1993

Abstract

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.

ChemInform Abstract

The overwriting characteristics of a phase-change-type erasable optical recording disk strongly depend on the properties of the protective layer. The effect of adhesion strength and residual stress is investigated. As revealed from application of amorphous SiN:H films by electron cyclotron resonance-PCVD and both S3N4 and ZnS films by magnetron sputtering on a GeSbTe recording layer the residual stress does not play an important role in improving repeatability.

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