ChemInform Abstract: Energy Considerations in the Deposition of High-Quality Plasma- Enhanced CVD Silicon Dioxide.
Abstract
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ChemInform Abstract
The quality and properties of silicon oxide films prepared by plasma- enhanced CVD reaction of SiH4 and N2O in a large flow of helium are studied as a function of the process temp. and RF power level. The best films are produced at the highest temp. and power. Films with lower porosity and improved bulk density can be deposited by raising either temp. or power. The temp. is found to have a greater effect on the impurity level in the films, while the RF power plays a more significant role in film structure at the atomic level.
