ChemInform Abstract: In situ Doping of Silicon Films Prepared by Low Pressure Chemical Vapor Deposition Using Disilane and Phosphine.
Abstract
The effects of temp., pressure, flow, and gas ratio on the electrical properties and morphology of in situ doped Si-films prepared by LPCVD using Si2H6 and PH3 are studied in order to optimize the deposition conditions.
ChemInform Abstract
The effects of temp., pressure, flow, and gas ratio on the electrical properties and morphology of in situ doped Si-films prepared by LPCVD using Si2H6 and PH3 are studied in order to optimize the deposition conditions. The film quality and morphology are found to be strongly dependent on the temp. and the best results are obtained in the range 500-625 °C, where a transition from completely amorphous to crystalline occurs. The optimized heavily doped films are deposited with a rate of ∼60 Å/min at 500 °C and have less than 5% radial thickness variation and resistivities of ∼770 μΩ cm after annealing at 850 °C.
