ChemInform Abstract: Oxidation of Plasma-Deposited α-SixC1-x:H Films
Abstract
in dry oxygen and air at 500-900 °C is studied for compositions in the range 0.25 ≦ x ≦ 0.51 and varying hydrogen concentrations.
ChemInform Abstract
in dry oxygen and air at 500-900 °C is studied for compositions in the range 0.25 ≦ x ≦ 0.51 and varying hydrogen concentrations. The oxide surface layers are characterized by etch rate measurements, XPS, and Rutherford backscattering. The oxidation rates measured for carbide films prepared by plasma-enhanced chemical vapor deposition from SiH4 and CH4 at 200-600 °C are found to increase with increasing C and H concentrations and fit reasonably well to a mixed linear-parabolic time dependence. The oxidation process appears to be favored by the presence of C-H bonds which are more abundant in the graphitic, C-rich films.
