Volume 20, Issue 2
Physical Inorganic Chemistry
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ChemInform Abstract: Electrical Properties of Bismuth Doped with Tin and Lead

D. BANERJEE

D. BANERJEE

Dep. Solid State Phys., Indian Assoc. Cultiv. Sci., Jadavpur, Calcutta-700032, India

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D. TALAPATRA

D. TALAPATRA

Dep. Solid State Phys., Indian Assoc. Cultiv. Sci., Jadavpur, Calcutta-700032, India

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R. BHATTACHARYA

R. BHATTACHARYA

Dep. Solid State Phys., Indian Assoc. Cultiv. Sci., Jadavpur, Calcutta-700032, India

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First published: January 10, 1989

Abstract

(0.17% and 0.56% Pb; 0.3 and 0.71% Sn) are studied in the temp. range 100-300 K. Tin and lead have different effects on the band structure of Bi.

ChemInform Abstract

(0.17% and 0.56% Pb; 0.3 and 0.71% Sn) are studied in the temp. range 100-300 K. Tin and lead have different effects on the band structure of Bi. Tin is found to be more effective than Pb in producing a change in band structure. Samples doped with Pb exhibit semiconducting properties, those doped with Sn show semimetallic and semiconducting properties depending on the concentration of dopant.

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