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ChemInform Abstract: Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization.
First published: October 7, 1986
Abstract
Silicon films of good crystallographic quality and high chemical purity have been deposited at low temp. 194 (750-850°C) using the UHV/CVD technique.
ChemInform Abstract
Silicon films of good crystallographic quality and high chemical purity have been deposited at low temp. 194 (750-850°C) using the UHV/CVD technique. TEM results show that the transition to essentially defect free material occurs between 750 and 800°C. In addition, UHV/CVD is shown to be a high throughput multiwafer system, achieving good film uniformities in a high wafer packi-ng density environment, attributable to operation in the low pressure limit of chemical kinetics.
