Volume 17, Issue 40
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ChemInform Abstract: The Polycrystalline-Si Contact to GaAs.

First published: October 7, 1986

Abstract

Polycrystalline-Si/GaAs interfaces have been prepared by depositing hydrogenated amorphous Si(a-Si:H) onto GaAs in a silane plasma at 450°C and annealing at temp. between 600 and 1050°C. Large quantities of P or As have been added to Si by mixing arsine or phosphine gases into the plasma.

ChemInform Abstract

Polycrystalline-Si/GaAs interfaces have been prepared by depositing hydrogenated amorphous Si(a-Si:H) onto GaAs in a silane plasma at 450°C and annealing at temp. between 600 and 1050°C. Large quantities of P or As have been added to Si by mixing arsine or phosphine gases into the plasma. Undoped Si/GaAs interfaces are metallurgically stable, while significant interdiffusion occurs in the case of P and As doping. Ohmic contacts prepared using Si(4 atom%P)/GaAs gave Contact resistances as low as 1.4·10-4 Ωcm2. Si(As)/GaAs interfaces are not ohmic over the range of composition and annealing temp. studied.

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