Surface Passivation and Transfer Doping of Silicon Nanowires†
Chun-Sheng Guo
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorLin-Bao Luo
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorGuo-Dong Yuan Dr.
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorXiao-Bao Yang Dr.
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorRui-Qin Zhang Dr.
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorWen-Jun Zhang Dr.
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorShuit-Tong Lee Prof.
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorChun-Sheng Guo
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorLin-Bao Luo
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorGuo-Dong Yuan Dr.
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorXiao-Bao Yang Dr.
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorRui-Qin Zhang Dr.
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorWen-Jun Zhang Dr.
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorShuit-Tong Lee Prof.
Center of Super-Diamond and Advanced Films & Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR (China)
Search for more papers by this authorThis work was supported by grants from the Research Grants Council of Hong Kong SAR [Project No. CityU 103907, CityU5/CRF/08, N_CityU 108/08].
Graphical Abstract
Staying on top: Altering the surface of silicon nanowires (SiNWs) by terminating the surface with different species and/or introducing surface adsorbates can change the electrical properties of the SiNWs. Such easy, nondestructive conductivity modification would expand possible applications of SiNWs.
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