Implementation of Quantum Level Addressability and Geometric Phase Manipulation in Aligned Endohedral Fullerene Qudits
Dr. Shen Zhou
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, China
These authors contributed equally to this work.
Search for more papers by this authorJiayue Yuan
College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, China
Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
These authors contributed equally to this work.
Search for more papers by this authorZi-Yu Wang
Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
Search for more papers by this authorKun Ling
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
Search for more papers by this authorPeng-Xiang Fu
Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
Search for more papers by this authorYu-Hui Fang
Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
Search for more papers by this authorDr. Ye-Xin Wang
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
Search for more papers by this authorDr. Zheng Liu
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
Search for more papers by this authorCorresponding Author
Prof. Kyriakos Porfyrakis
School of Engineering, University of Greenwich, Central Avenue, Chatham Maritime, Kent, ME4 4TB UK
Materials Department, Oxford University, Oxford, UK
Search for more papers by this authorProf. G. Andrew D. Briggs
Materials Department, Oxford University, Oxford, UK
Search for more papers by this authorProf. Song Gao
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
Search for more papers by this authorCorresponding Author
Prof. Shang-Da Jiang
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
Search for more papers by this authorDr. Shen Zhou
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, China
These authors contributed equally to this work.
Search for more papers by this authorJiayue Yuan
College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, China
Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
These authors contributed equally to this work.
Search for more papers by this authorZi-Yu Wang
Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
Search for more papers by this authorKun Ling
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
Search for more papers by this authorPeng-Xiang Fu
Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
Search for more papers by this authorYu-Hui Fang
Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
Search for more papers by this authorDr. Ye-Xin Wang
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
Search for more papers by this authorDr. Zheng Liu
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
Search for more papers by this authorCorresponding Author
Prof. Kyriakos Porfyrakis
School of Engineering, University of Greenwich, Central Avenue, Chatham Maritime, Kent, ME4 4TB UK
Materials Department, Oxford University, Oxford, UK
Search for more papers by this authorProf. G. Andrew D. Briggs
Materials Department, Oxford University, Oxford, UK
Search for more papers by this authorProf. Song Gao
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
Beijing National Laboratory of Molecular Science, Beijing Key Laboratory of Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
Search for more papers by this authorCorresponding Author
Prof. Shang-Da Jiang
Spin-X Institute, School of Chemistry and Chemical Engineering, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou, China
Search for more papers by this authorAbstract
Endohedral nitrogen fullerenes have been proposed as building blocks for quantum information processing due to their long spin coherence time. However, addressability of the individual electron spin levels in such a multiplet system of 4S3/2 has never been achieved because of the molecular isotropy and transition degeneracy among the Zeeman levels. Herein, by molecular engineering, we lifted the degeneracy by zero-field splitting effects and made the multiple transitions addressable by a liquid-crystal-assisted method. The endohedral nitrogen fullerene derivatives with rigid addends of spiro structure and large aspect ratios of regioselective bis-addition improve the ordering of the spin ensemble. These samples empower endohedral-fullerene-based qudits, in which the transitions between the 4 electron spin levels were respectively addressed and coherently manipulated. The quantum geometric phase manipulation, which has long been proposed for the advantages in error tolerance and gating speed, was implemented in a pure electron spin system using molecules for the first time.
Conflict of interest
The authors declare no conflict of interest.
Open Research
Data Availability Statement
The data that support the findings of this study are available from the corresponding author upon reasonable request.
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