Unexpected Hole Doping of Graphene by Osmium Adatoms
Jamie A. Elias
Washington University in St. Louis, Department of Physics, Campus Box 1105, One Brookings Drive, St. Louis, MO, 63130
Search for more papers by this authorCorresponding Author
Erik A. Henriksen
Washington University in St. Louis, Department of Physics, Campus Box 1105, One Brookings Drive, St. Louis, MO, 63130
Institute of Materials Science & Engineering, Washington University in St. Louis, One Brookings Drive, St. Louis, MO, 63130
E-mail: [email protected]Search for more papers by this authorJamie A. Elias
Washington University in St. Louis, Department of Physics, Campus Box 1105, One Brookings Drive, St. Louis, MO, 63130
Search for more papers by this authorCorresponding Author
Erik A. Henriksen
Washington University in St. Louis, Department of Physics, Campus Box 1105, One Brookings Drive, St. Louis, MO, 63130
Institute of Materials Science & Engineering, Washington University in St. Louis, One Brookings Drive, St. Louis, MO, 63130
E-mail: [email protected]Search for more papers by this authorAbstract
The electronic transport of monolayer graphene devices is studied before and after in situ deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge-doping efficiency. The charge neutrality point of graphene is found to vary non-monotonically with gate voltage as the sample is warmed to room temperature, suggesting that osmium diffuses on the surface but is not completely removed.
Conflict of Interest
The authors declare no conflict of interest.
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