Original Paper

Leakage current through high permittivity thin films

Corresponding Author

H. Schroeder

[email protected]

Institut für Elektrokeramische Materialien am Institut für Festkörperforschung (IFF), and cni – Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

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S. Schmitz,

S. Schmitz

Present address: Stiftung CAESAR, 53175 Bonn, Germany

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H. Schroeder,

Corresponding Author

H. Schroeder

[email protected]

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S. Schmitz,

S. Schmitz

Present address: Stiftung CAESAR, 53175 Bonn, Germany

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First published: 10 February 2004

https://doi.org/10.1002/andp.200451601-228

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Abstract

For the leakage current through high-permittivity, low-electronic mobility, perovskite-type thin films a bulk-limited conduction mechanism is suggested, in contrast to the often assumed interface injection limitation. This model can successfully describe measured leakage data of field, temperature, thickness and electrode dependence in SrTiO₃ and Ba_0.7Sr_0.3TiO₃ thin films.

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Volume516, Issue1-2

January 2004

Pages 90-92

Leakage current through high permittivity thin films

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Leakage current through high permittivity thin films

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