Chapter 9

Hybrid 1D Semiconducting ZnO and GaN Nanostructures for Light-Emitting Devices

Vinod Kumar

Vinod Kumar

1 Dambi Dollo University, College of Natural and Computational Science, Department of Physics, Dambi Dollo, P.O. Box 260, Ethiopia

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Habtamu F. Etefa

Habtamu F. Etefa

1 Dambi Dollo University, College of Natural and Computational Science, Department of Physics, Dambi Dollo, P.O. Box 260, Ethiopia

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Mulugeta T. Efa

Mulugeta T. Efa

2 Dambi Dollo University, College of Natural and Computational Science, Department of Chemistry, Dambi Dollo, P.O. Box 260, , Ethiopia

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Leta T. Jule

Leta T. Jule

1 Dambi Dollo University, College of Natural and Computational Science, Department of Physics, Dambi Dollo, P.O. Box 260, Ethiopia

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First published: 02 December 2022

Summary

One-dimensional (1D) semiconductor is very useful for the advanced hybrid devices for light emitting. Zinc oxide (ZnO) is a broadly reported semiconductor due to its stability, wide bandgap, and electrical and optical properties, which make it suitable for different applications. Lot of fabrication techniques are reported for the synthesis of ZnO nanostructures. Most of these synthesis techniques are based on the solution processes. While, there is an enormous increase in the surface-to-volume ratio for nanoparticles (NPs) with respect to the bulk sample. Other than this, the number of grain boundaries is also high. There is a considerable reduction in the number of grain boundaries in the 1D nanostructure compared to the other NPs. A brief summary of several synthesis techniques used for the production of 1D nanostructures is provided in this chapter. The capability to tune the shape as well as the size of these 1D nanostructures formulates them for numerous optoelectronic devices like diodes, light-emitting diodes (LEDs), and solar cells. The role of hybrid 1D structure on the performance of LEDs is also compared in this chapter.

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