1D and 2D Semiconducting Hybrid Nanostructures for Advanced Photodiodes
Norazriena Yusoff
1 Universiti Malaya, Photonics Research Centre,, Kuala Lumpur, Malaysia
Search for more papers by this authorTamil M. Thandavan
1 Universiti Malaya, Photonics Research Centre,, Kuala Lumpur, Malaysia
Search for more papers by this authorHarith Ahmad
1 Universiti Malaya, Photonics Research Centre,, Kuala Lumpur, Malaysia
Search for more papers by this authorKavintheran Thambiratnam
1 Universiti Malaya, Photonics Research Centre,, Kuala Lumpur, Malaysia
Search for more papers by this authorNorazriena Yusoff
1 Universiti Malaya, Photonics Research Centre,, Kuala Lumpur, Malaysia
Search for more papers by this authorTamil M. Thandavan
1 Universiti Malaya, Photonics Research Centre,, Kuala Lumpur, Malaysia
Search for more papers by this authorHarith Ahmad
1 Universiti Malaya, Photonics Research Centre,, Kuala Lumpur, Malaysia
Search for more papers by this authorKavintheran Thambiratnam
1 Universiti Malaya, Photonics Research Centre,, Kuala Lumpur, Malaysia
Search for more papers by this authorArvind Kumar
Chaman Lal Mahavidyalaya, Department of Physics, Haridwar, 247664 India
Search for more papers by this authorSummary
Photodetectors (PDs) are optoelectronic devices that use the photoelectric effect to transform optical signals into electrical signals. They are a fundamental component of today's multifunctional technologies. Optical communication, biological/chemical sensing, security, spectroscopy, biomedical imaging, environmental monitoring, fire detection, night vision, and motion detection are examples of applications that all benefit from efficient and ultrasensitive photodetection. For practical applications, it is critical to produce PDs with excellent performance, such as high responsivity, high gain, and high detectivity, as well as fast response and low power consumption. As a result, a major current research priority in optoelectronics is the creation of broadband PDs with high performance and low power consumption. Low-dimensional materials, for instance, one-dimensional (1D) and two dimensional (2D) materials, have attracted a lot of attention for producing high-performance broadband PDs because of their unique geometries and high surface-to-volume ratios. 1D materials have outstanding material features, such as high carrier mobility and radiative recombination rate, as well as long-term stability, whereas 2D layers have mechanical flexibility, good optical transparency, and electrical characteristics. The hybrid nanostructure of 1D and 2D materials exhibits atomically sharp interface, flexible, stretchable, and mechanically strong as well as possesses interesting and excellent physical properties and good compatibility. Besides that, the developed 1D/2D hybrid nanostructure also offer new high-quality and functional flexible devices by overcoming some of the current restrictions in the PDs technology. This book chapter provides an overview of current research on 1D semiconductor nanostructures grown on 2D nanomaterials to form hybrid nanostructures for advanced photodiode applications.
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