Chapter 5

Poly-SiGe Surface Micromachining

Carrie W. Low

Carrie W. Low

TDK InvenSense, 1745 Technology Dr., San Jose, CA, 95110 USA

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Sergio F. Almeida

Sergio F. Almeida

DiDi Labs, 450 National Ave., Mountain View, CA, 94043 USA

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Emmanuel P. Quévy

Emmanuel P. Quévy

ProbiusDx Inc., 39355 California St., Suite 207, Fremont, CA, 94538 USA

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Roger T. Howe

Roger T. Howe

Stanford University, Department of Electrical Engineering, 330 Jane Stanford Way, Stanford, CA, 94305 USA

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First published: 23 April 2021
Citations: 1

Summary

Micro-electro mechanical system (MEMS) technologies have enabled chip-scale sensors, actuators, and resonators, which are fabricated using the tools of semiconductor manufacturing. Using low-temperature low-pressure chemical vapor deposition poly-SiGe as the structural material, MEMS resonators can be built directly on top of an advanced mixed-signal complementary metal oxide semiconductor (CMOS), achieving MEMS+CMOS integration in a single chip. Poly-SiGe has been investigated as alternative structural material for surface micromachining. One major drawback of poly-SiGe compared to poly-Si is its cost. Germane is an expensive gaseous precursor needed for poly-SiGe deposition. CMEMS® technology enables the modular post-processing of MEMS devices directly on top of advanced RF/mixed-signal CMOS circuitry. CMEMS® oscillators have superior long-term aging performance when compared with two-chip MEMS oscillators and quartz oscillators. CMEMS® oscillators combines the advantages of MEMS-based timing solutions while retaining and improving many of the best characteristics of traditional quartz crystals.

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