Nanosession: Low-Dimensional Transport and Ballistic Effects

Arkadius Ganczarczyk

Arkadius Ganczarczyk

Experimental Physics and CeNIDE, Universität Duisburg-Essen, Duisburg, Germany

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Martin Geller

Martin Geller

Experimental Physics and CeNIDE, Universität Duisburg-Essen, Duisburg, Germany

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Axel Lorke

Axel Lorke

Experimental Physics and CeNIDE, Universität Duisburg-Essen, Duisburg, Germany

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Dirk Reuter

Dirk Reuter

Chair of Solid State Physics, Ruhr-Universität Bochum, Bochum, Germany

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Andreas D. Wieck

Andreas D. Wieck

Chair of Solid State Physics, Ruhr-Universität Bochum, Bochum, Germany

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M. Szelong

M. Szelong

Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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U. Wieser

U. Wieser

Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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M. Knop

M. Knop

Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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U. Kunze

U. Kunze

Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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D. Reuter

D. Reuter

Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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A. D. Wieck

A. D. Wieck

Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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J. F. von Pock

J. F. von Pock

Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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D. Salloch

D. Salloch

Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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U. Wieser

U. Wieser

Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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U. Kunze

U. Kunze

Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

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T. Hackbarth

T. Hackbarth

DaimlerChrysler Forschungszentrum Ulm, D-89081 Ulm, Germany

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Robert Frielinghaus

Robert Frielinghaus

Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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K. Sladek

K. Sladek

Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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K. Flöhr

K. Flöhr

II. Physikalisches Institut, RWTH Aachen University, 52056 Aachen, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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L. Houben

L. Houben

Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany

Ernst Ruska-Center for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, 52425 Jülich, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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St. Trellenkamp

St. Trellenkamp

Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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T. E. Weirich

T. E. Weirich

Central Facility for Electron Microscopy GFE, RWTH Aachen University, 52074 Aachen, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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M. Morgenstern

M. Morgenstern

II. Physikalisches Institut, RWTH Aachen University, 52056 Aachen, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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H. Hardtdegen

H. Hardtdegen

Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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Th. Schäpers

Th. Schäpers

Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany

II. Physikalisches Institut, RWTH Aachen University, 52056 Aachen, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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C. M. Schneider

C. M. Schneider

Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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C. Meyer

C. Meyer

Peter Grünberg Institut, Forschungszentrum Jülich, 52425 Jülich, Germany

JARA – Fundamentals of Future Information Technologies, Germany

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Maciej Misiorny

Maciej Misiorny

Peter Grünberg Institut, Forschungszentrum Jülich & JARA Jülich Aachen Research Alliance, 52425 Jülich, Germany

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Michael Hell

Michael Hell

Peter Grünberg Institut, Forschungszentrum Jülich & JARA Jülich Aachen Research Alliance, 52425 Jülich, Germany

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Maarten Wegewijs

Maarten Wegewijs

Peter Grünberg Institut, Forschungszentrum Jülich & JARA Jülich Aachen Research Alliance, 52425 Jülich, Germany

Institute for Theory of Statistical Physics, RWTH Aachen, 52056 Aachen, Germany

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Angeliki Balliou

Angeliki Balliou

Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Athens 15310, Greece

NTUA, Department of Chemical Engineering, Zographou Campus, Athens 15773, Greece

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Antonios Douvas

Antonios Douvas

Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Athens 15310, Greece

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Dimitrios Velessiotis

Dimitrios Velessiotis

Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Athens 15310, Greece

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Vassilis Ioannou-Sougleridis

Vassilis Ioannou-Sougleridis

Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Athens 15310, Greece

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Pascal Normand

Pascal Normand

Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Athens 15310, Greece

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Panagiotis Argitis

Panagiotis Argitis

Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Athens 15310, Greece

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Nikos Glezos

Nikos Glezos

Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, Athens 15310, Greece

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First published: 19 June 2012

Summary

This chapter contains five sections. The first section presents non-linear (and linear) transport properties of ballistic electron focusing devices. The second section describes Hall effect in an asymmetric ballistic cross junction. The third section discusses an elimination of hot-electron thermopower from ballistic rectification using a dual-cross device. The fourth section describes structural influences on electronic transport in nanostructures. The fifth section provides tunnel-induced spin-anisotropy in quantum dot spin valves. Atomic-scale spintronic systems, such as single-molecule magnets (SMMs) and magnetic adatoms, have recently been studied intensely mainly because of their large spin-anisotropy arising from strong spin-orbit and ligand fields. The spin-anisotropy can also be generated in spin-isotropic systems by spin-dependent transport of electrons.

Controlled Vocabulary Terms

electron beam focusing; Hall effect; nanostructured materials; quantum dots; thermoelectric power

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