Preparation of a Highly Conductive Al2O3/TiN Interlayer Nanocomposite through Selective Matrix Grain Growth
Summary
An electroconductive TiN/Al203 nanocomposite was prepared by a selective matrix grain growth method, using a powder mixture of submicrosized a-Al203, nanosized y-Al203, and TiN nanoparticles synthesized through an in situ nitridation process. During sintering, a self-concentration of TiN nanoparticles at the matrix grain boundary occurred, as a result of the selective growth of large a-Al203 matrix grains. Under suitable sintering conditions, a typical interlayer nanostructure with a continuous nanosized TiN interlayer was formed along the Al203 matrix grain boundary, and the electroconducting behavior of the material was significantly improved. Twelve volume percent TiN/ Al203 nanocomposite with such an interlayer nanostructure showed an unprecedentedly low resistivity of 8 x 1(T3 n •cm, which was more than two orders lower than the TiNAl203 nanocomposite without such an interlayer nanostructure.