Volume 188, Issue 3 pp. 1169-1175
Original Paper

The Effect of Both Abrupt and Strong Enhancement of Current in the Semiconductor System: Schottky Barrier Containing a Double Barrier Resonant-Tunneling Structure

A.M. Korol

A.M. Korol

National Taras Shevchenko University of Kiev, Volodymyrska 64, Kiev 033, Ukraine

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O.V. Tretyak

O.V. Tretyak

National Taras Shevchenko University of Kiev, Volodymyrska 64, Kiev 033, Ukraine

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D.I. Sheka

D.I. Sheka

National Taras Shevchenko University of Kiev, Volodymyrska 64, Kiev 033, Ukraine

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Abstract

The current–voltage characteristics for the double barrier resonant-tunneling structure incorporated into the depletion region of a Schottky barrier, are evaluated and analyzed. It is demonstrated that the Schottky barrier can block or unblock (depending on the parameters of the problem involved) the resonant-tunneling current effectively. Hence both a very sharp and strong enhancement of current through the structure considered takes place for forward bias.

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