The Effect of Both Abrupt and Strong Enhancement of Current in the Semiconductor System: Schottky Barrier Containing a Double Barrier Resonant-Tunneling Structure
Abstract
The current–voltage characteristics for the double barrier resonant-tunneling structure incorporated into the depletion region of a Schottky barrier, are evaluated and analyzed. It is demonstrated that the Schottky barrier can block or unblock (depending on the parameters of the problem involved) the resonant-tunneling current effectively. Hence both a very sharp and strong enhancement of current through the structure considered takes place for forward bias.