Volume 180, Issue 2 pp. 523-531
Original Paper

Space-Charge Region Scattering in Indium Monoselenide

P.I. Savitskii

P.I. Savitskii

Chernivtsi Department of the Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Iryna Vilde St. 5, Chernivtsi 58001, Ukraine

Search for more papers by this author
Z.D. Kovalyuk

Z.D. Kovalyuk

Chernivtsi Department of the Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Iryna Vilde St. 5, Chernivtsi 58001, Ukraine

Search for more papers by this author
I.V. Mintyanskii

I.V. Mintyanskii

Chernivtsi Department of the Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Iryna Vilde St. 5, Chernivtsi 58001, Ukraine

Search for more papers by this author

Abstract

Scattering mechanisms in undoped n-type indium monoselenide have been studied in the temperature range between 80 and 400 K. The experimental data were obtained from Hall and photo-Hall effects. It is shown that in the samples with low room temperature Hall mobility (μH = 600 to 750 cm2/Vs) the temperature dependence of μH(T) can be explained by electron scattering on charged impurity aggregates surrounded by space-charge regions. Under illumination the neutralization of the effective charge of impurity aggregates by photo-excited carriers is the reason for the predominant electron scattering on homopolar optical phonons A′1g.

The full text of this article hosted at iucr.org is unavailable due to technical difficulties.