Volume 180, Issue 1 pp. 133-138

Original Paper

Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides

P. Waltereit,

P. Waltereit

[email protected]

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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O. Brandt,

O. Brandt

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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M. Ramsteiner,

M. Ramsteiner

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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A. Trampert,

A. Trampert

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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H.T. Grahn,

H.T. Grahn

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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J. Menniger,

J. Menniger

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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M. Reiche,

M. Reiche

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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R. Uecker,

R. Uecker

Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489 Berlin, Germany

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P. Reiche,

P. Reiche

Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489 Berlin, Germany

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K.H. Ploog,

K.H. Ploog

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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P. Waltereit,

P. Waltereit

[email protected]

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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O. Brandt,

O. Brandt

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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M. Ramsteiner,

M. Ramsteiner

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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A. Trampert,

A. Trampert

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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H.T. Grahn,

H.T. Grahn

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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J. Menniger,

J. Menniger

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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M. Reiche,

M. Reiche

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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R. Uecker,

R. Uecker

Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489 Berlin, Germany

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P. Reiche,

P. Reiche

Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489 Berlin, Germany

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K.H. Ploog,

K.H. Ploog

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10177 Berlin, Germany

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First published: 21 July 2000

https://doi.org/10.1002/1521-396X(200007)180:1<133::AID-PSSA133>3.0.CO;2-A

Citations: 58

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Abstract

We investigate the growth of M-plane GaN(1 equation image 00) on γ-LiAlO₂(100) by molecular beam epitaxy. The crystal orientation and structural properties of buffer layers are examined by means of reflection high-energy electron diffraction, high-resolution transmission electron microscopy, X-ray diffraction, Raman scattering, and atomic force microscopy. The layers are shown to be single-phase GaN(1 equation image 00}<$>) within the measurements' sensitivity. In contrast to the ubiquitous C-plane GaN[0001] orientation, the M-plane of wurtzite nitrides is free of electrical polarization. This is experimentally verified for (Al,Ga)N/GaN heterostructures by continuous-wave and time-resolved luminescence.

References

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Volume180, Issue1

July 2000

Pages 133-138

Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides

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Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides

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