Detailed Study of Bandgap Energy Levels in CdTe Films Electrodeposited from Chlorine-Containing Solutions

A.E. Rakhshani,

A.E. Rakhshani

[email protected]

Physics Department, College of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait

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Y. Makdisi,

Y. Makdisi

Physics Department, College of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait

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A.E. Rakhshani,

A.E. Rakhshani

[email protected]

Physics Department, College of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait

Search for more papers by this author

Y. Makdisi,

Y. Makdisi

Physics Department, College of Science, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait

Search for more papers by this author

First published: 14 June 2000

https://doi.org/10.1002/1521-396X(200005)179:1<159::AID-PSSA159>3.0.CO;2-B

Citations: 9

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Abstract

Thin films of CdTe are electrodeposited at different temperatures and potentials on stainless steel foil substrates from a 1M CdSO₄ solution containing chlorine (0.03 to 0.06 M). Current–voltage, conductivity–temperature and photoinduced current transient spectroscopy measurements have been performed on devices formed by evaporation of semitransparent Au electrodes on CdTe. The bandgap energy levels in these films have a distinctly different spectrum compared to films deposited from Cl-free solutions. In addition to some deep hole levels which can also exist in Cl-free films, a range of shallow hole traps (within 0.4 eV from the valence band edge) have been measured and their origins have been identified. The influence of these shallow hole traps on the charge transport mechanism and the activation energy of conductivity is discussed.

References

[1] J.M. Woodcock, A.K. Turner, M.E. Ozsan, and J.G. Summers, 22nd IEEE P. V. Spec. Conf., IEEE, New York 1991 (p. 842).
Google Scholar
[2] P.V. Meyers and R. Birkmire, Progr. Photovoltaics: Research and Applications 3 393 (1995).
10.1002/pip.4670030604
CAS Web of Science® Google Scholar
[3] B.M. Basol, Solar Cells 23 69 (1988).
10.1016/0379-6787(88)90008-7
CAS Web of Science® Google Scholar
[4] A.E. Rakhshani and H.A. Ramazaniyan, phys. stat. sol. (a) 172 379 (1999).
10.1002/(SICI)1521-396X(199904)172:2<379::AID-PSSA379>3.0.CO;2-Y
CAS Web of Science® Google Scholar
[5] A.E. Rakhshani, Y. Makdisi, X. Mathew, and N.R. Mathews, phys. stat. sol. (a) 168 177 (1998).
10.1002/(SICI)1521-396X(199807)168:1<177::AID-PSSA177>3.0.CO;2-9
CAS Web of Science® Google Scholar
[6] A.E. Rakhshani, phys. stat. sol. (a) 169 85 (1998).
10.1002/(SICI)1521-396X(199809)169:1<85::AID-PSSA85>3.0.CO;2-P
CAS Web of Science® Google Scholar
[7] B.M. Basol, J. Appl. Phys. 58 3809 (1985).
10.1063/1.335595
CAS Google Scholar
[8] G.C. Morris and S.K. Das, Internat. J. Solar Energy 12 95 (1992).
10.1080/01425919208909753
Google Scholar
[9] A. Pal, J. Dutta, D. Bhattacharyya, S. Chaudhuri, and A.K. Pal, Vacuum 46 147 (1995).
10.1016/0042-207X(94)E0023-R
CAS Web of Science® Google Scholar
[10] S.K. Das and G.C. Morris, J. Appl. Phys. 73 782 (1993).
10.1063/1.353338
CAS Web of Science® Google Scholar
[11] B.M. Basol, E.S. Tseng, and D.S. Lo, US Patent 4629820 (1986).
Google Scholar
[12] D.C. Look, in: Semiconductor and Semimetals, Vol. 19, Ed. R. K. Willardson and A. C. Beer, Academic Press, New York 1983 (p. 75).
Google Scholar
[13] M.J.S.P. Brasil and P. Motisuke, J. Appl. Phys. 68 3370 (1990).
10.1063/1.346339
CAS Web of Science® Google Scholar
[14] J.C. Balland, J.P. Zielinger, C. Nuguet, and M. Tapiero, J. Phys. D 19 57 (1986).
10.1088/0022-3727/19/1/011
CAS Web of Science® Google Scholar
[15] A. Blondeel, P. Clauws, and D. Vyncke, J. Appl. Phys. 81 6767 (1997).
10.1063/1.365219
CAS Web of Science® Google Scholar
[16] M. Samimi, B. Biglari, M. Hage-Ali, J.M. Koebel, and P. Siffert, phys. stat. sol. (a) 100 251 (1987).
10.1002/pssa.2211000129
CAS Web of Science® Google Scholar
[17] M. Hage-Ali, B. Yaacoub, S. Mergui, M. Samimi, B. Biglari, and P. Siffert, Appl. Surf. Sci. 50 377 (1991).
10.1016/0169-4332(91)90202-U
CAS Web of Science® Google Scholar
[18] C. Eiche, D. Majer, D. Sinerius, J. Weese, K.W. Benz, and J. Honerkamp, J. Appl. Phys. 74 6667 (1993).
10.1063/1.355109
CAS Web of Science® Google Scholar
[19] W.I. Lee, N.R. Taskar, S.K. Ghandi, and J.M. Borrego, Solar Cells 24 279 (1988).
10.1016/0379-6787(88)90079-8
CAS Web of Science® Google Scholar
[20] M.A. Lampert and P. Mark, Current Injection in Solids, Academic Press, New York 1970.
Google Scholar
[21] K. Zanio, in: Semiconductors and Semimetals, Vol. 13, Chap. 3, Ed. R. K. Willardson and A. C. Beer, Academic Press, New York 1978.
Google Scholar
[22] T.A. Kuhn, W. Ossau, A. Waag, R.N. Bicknell-Tassius, and G. Landwehr, J. Cryst. Growth 117 660 (1992).
10.1016/0022-0248(92)90832-4
CAS Web of Science® Google Scholar
[23] S. Seto, A. Tanaka, Y. Masa, and M. Kawashima, J. Cryst. Growth 117 271 (1992).
10.1016/0022-0248(92)90758-B
CAS Web of Science® Google Scholar
[24] K. Akimoto, H. Okuyama, M. Ikeda, and Y. Mori, J. Cryst. Growth 117 420 (1992).
10.1016/0022-0248(92)90787-J
CAS Web of Science® Google Scholar
[25] V. Valdna, F. Buschmann, and E. Mellikov, J. Cryst. Growth 161 164 (1996).
10.1016/0022-0248(95)00628-1
CAS Web of Science® Google Scholar
[26] Cs. Szeles, Y.Y. Shan, K.G. Lynn, and A.R. Moodenbaugh, Phys. Rev. B 55 6945 (1997).
10.1103/PhysRevB.55.6945
CAS Web of Science® Google Scholar
[27] R.H. Bube, Photoelectronic Properties of Semiconductors, Cambridge University Press, Cambridge 1992 (p. 190).
Google Scholar

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Volume179, Issue1

May 2000

Pages 159-170

Detailed Study of Bandgap Energy Levels in CdTe Films Electrodeposited from Chlorine-Containing Solutions

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Detailed Study of Bandgap Energy Levels in CdTe Films Electrodeposited from Chlorine-Containing Solutions

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