Volume 234, Issue 3 pp. 746-749

Original Paper

Recombination Dynamics of Localized Excitons in Cubic Phase In_xGa_1—xN/GaN Multiple Quantum Wells on 3C-SiC/Si (001)

SF. Chichibu,

SF. Chichibu

[email protected]

NICP, ERATO, Japan Science and Technology Corporation (JST), 2-4-6 Fujimi, Tokyo 102-0071, Japan

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T. Onuma,

T. Onuma

Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

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T. Kitamura,

T. Kitamura

Power Electronics Research Center 2, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan

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T. Sota,

T. Sota

Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan

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S.P. DenBaars,

S.P. DenBaars

Department of Materials Engineering, University of California, Santa Barbara, CA 93106, USA

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S. Nakamura,

S. Nakamura

NICP, ERATO, Japan Science and Technology Corporation (JST), 2-4-6 Fujimi, Tokyo 102-0071, Japan

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H. Okumura,

H. Okumura

Power Electronics Research Center 2, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan

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SF. Chichibu,

SF. Chichibu

[email protected]

NICP, ERATO, Japan Science and Technology Corporation (JST), 2-4-6 Fujimi, Tokyo 102-0071, Japan

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T. Onuma,

T. Onuma

Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

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T. Kitamura,

T. Kitamura

Power Electronics Research Center 2, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan

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T. Sota,

T. Sota

Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan

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S.P. DenBaars,

S.P. DenBaars

Department of Materials Engineering, University of California, Santa Barbara, CA 93106, USA

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S. Nakamura,

S. Nakamura

NICP, ERATO, Japan Science and Technology Corporation (JST), 2-4-6 Fujimi, Tokyo 102-0071, Japan

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H. Okumura,

H. Okumura

Power Electronics Research Center 2, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan

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First published: 03 December 2002

https://doi.org/10.1002/1521-3951(200212)234:3<746::AID-PSSB746>3.0.CO;2-0

Citations: 2

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Abstract

Recombination dynamics of localized excitons in strained cubic (c-)In_xGa_1—xN/c-GaN multiple quantum wells (MQWs) were studied. In contrast to hexagonal (h-)InGaN quantum wells (QWs), low-excitation photoluminescence (PL) peak energy increased moderately with decreasing well thickness L and the PL decay time did not depend on L. The results indicated that piezoelectric field had negligible influence on the transition processes. The time-resolved photoluminescence (TRPL) signal showed a stretched exponential decay up to 300 K, showing that the spontaneous emission is due to the radiative recombination of excitons localized in disordered quantum nanostructures even at 300 K. Decrease in internal quantum efficiency (η), which is related to the increase in quasi-radiative lifetime, with the increase in temperature was explained to be due to reduced localization rate.

References

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Volume234, Issue3

December 2002

Pages 746-749

Recombination Dynamics of Localized Excitons in Cubic Phase In_xGa_1—xN/GaN Multiple Quantum Wells on 3C-SiC/Si (001)

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Recombination Dynamics of Localized Excitons in Cubic Phase InxGa1—xN/GaN Multiple Quantum Wells on 3C-SiC/Si (001)

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Recombination Dynamics of Localized Excitons in Cubic Phase In_xGa_1—xN/GaN Multiple Quantum Wells on 3C-SiC/Si (001)