Volume 229, Issue 2 pp. 903-906
Original Paper

MOCVD Growth of ZnO on Sapphire Using Tert-Butanol

V. Sallet

V. Sallet

CNRS-LPSC, 1 place A. Briand, F-92195 Meudon Cedex, France

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J.F. Rommeluere

J.F. Rommeluere

CNRS-LPSC, 1 place A. Briand, F-92195 Meudon Cedex, France

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A. Lusson

A. Lusson

CNRS-LPSC, 1 place A. Briand, F-92195 Meudon Cedex, France

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A. Rivière

A. Rivière

CNRS-LPSC, 1 place A. Briand, F-92195 Meudon Cedex, France

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S. Fusil

S. Fusil

Université d'Evry, Bât. des Sciences, F-91025 Evry Cedex, France

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O. Gorochov

O. Gorochov

CNRS-LPSC, 1 place A. Briand, F-92195 Meudon Cedex, France

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R. Triboulet

R. Triboulet

CNRS-LPSC, 1 place A. Briand, F-92195 Meudon Cedex, France

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Abstract

The growth of ZnO on (0001) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) is investigated. Usual growth conditions are detailed. In addition, a particular attention is paid to the cleanness state of the MOCVD reactor. ZnO epilayers are characterized by scanning electron microscopy, X-ray diffraction and photoluminescence.

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