MOCVD Growth of ZnO on Sapphire Using Tert-Butanol
Abstract
The growth of ZnO on (0001) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) is investigated. Usual growth conditions are detailed. In addition, a particular attention is paid to the cleanness state of the MOCVD reactor. ZnO epilayers are characterized by scanning electron microscopy, X-ray diffraction and photoluminescence.