E-Beam Longitudinally Pumped Laser Based on ZnCdSe/ZnSe MQW Structure Grown by MBE on ZnSe(001) Substrate
Abstract
Electron beam longitudinally pumped laser based on 15 ZnCdSe/ZnSe QW periodic-gain structure grown by molecular beam epitaxy on ZnSe(001) substrate was studied. An output power of 0.3 W was achieved. The laser wavelength was in 518–536 nm range, being at the short wavelength side of the QW emission line at low excitation level. Such unusual feature was explained by the participation of excited QW levels in the creation of the optical gain.